Art.Nr.:
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (N-MOSV)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (N-MOSV)
Inclusief B.T.W. (21%) Verzendkosten
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (N-MOSV) • Low drain-source ON resistance : RDS (ON) = 1.7 O (typ.)
• High forward transfer admittance : |Yfs| = 3.0 S (typ.)
• Low leakage current : IDSS = 100 µA (max) (VDS = 600 V)
• Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
• High forward transfer admittance : |Yfs| = 3.0 S (typ.)
• Low leakage current : IDSS = 100 µA (max) (VDS = 600 V)
• Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)